![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Garcia S. Martin J.M. Martil I. Gonzalez-Diaz G.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.315, Iss.1, 1998-03, pp. : 22-28
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Physical properties of plasma deposited SiO x thin films
By San Andres E. del Prado A. Martil I. Gonzalez G. Martnez F.L. Bravo D. Lopez F.J. Fernandez M.
Vacuum, Vol. 67, Iss. 3, 2002-09 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
The mechanism of dehydrogenation of SiN x :H films
By Smirnova T.P. Yakovkina L.V.
Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Properties of a-Si:H films grown using hot wire-ECR plasma techniques
By Dalal V.L. Seberger P. Ring M. Sharma P.
Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. :