Low-temperature epitaxial growth of B doped Si films on Si(100) and Si(111)

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Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 274-278

Elsevier

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Low temperature epitaxial growth of Si and Si 1-y C y films by hot wire cell method

By Watahiki T.   Abe K.   Tamura H.   Miyajima S.   Yamada A.   Konagai M.  

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Low temperature epitaxial growth of Si on Si(111) by gas-source MBE with heat-pulse annealing

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Low-temperature epitaxial growth of Si by electron cyclotron resonance chemical vapor deposition

By Platen J.   Selle B.   Sieber I.   Brehme S.   Zeimer U.   Fuhs W.  

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

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