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By Watahiki T.   Abe K.   Yamada A.   Konagai M.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 283-286

Elsevier

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Molecular beam epitaxial growth and photoluminescence investigation of Si 1-y C y layers

By Zerlauth S.   Penn C.   Seyringer H.   Stangl J.   Brunthaler G.   Bauer G.   Schaffler F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 33-40

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Growth of epitaxial SiGe nanostructures at low temperature on Si(100) using hot-wire assisted gas source molecular beam epitaxy

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Epitaxial growth of Si 1-x-y Ge x C y film on Si(100) in a SiH 4 -GeH 4 -CH 3 SiH 3 reaction

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New Ge substrate cleaning method for Si 1-x-y Ge x C y MOMBE growth

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