Residual strain and surface roughness of Si 1-x Ge x alloy layers grown by molecular beam epitaxy on Si(001) substrate

By Tatsuyama C.   Asano T.   Nakao T.   Matada H.   Tambo T.   Ueba H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 161-166

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Relaxed epitaxial Si 1-x Ge x grown by MBE

By Monakhov E.V.   Shiryaev S.Y.   Nylandsted Larsen A.   Hartung J.   Davies G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 43-46

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Properties of optically active Si:Er and Si 1-x Ge x layers grown by the sublimation MBE method

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The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si 1-x Ge x on Si substrates

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Surface segregation of boron atoms in Si and strained Si 1-x Ge x layers during MBE growth: Experiment and simulation

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