Properties of optically active Si:Er and Si 1-x Ge x layers grown by the sublimation MBE method - [Thin Solid Films 369 (2000) 320-323]

By Stepikhova M.V.   Andreev B.A.   Shmagin V.B.   Krasil'nik Z.F.   Kuznetsov V.P.   Shengurov V.G.   Svetlov S.P.   Jantsch W.   Palmetshofer L.   Ellmer H.  

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Elsevier

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Relaxed epitaxial Si 1-x Ge x grown by MBE

By Monakhov E.V.   Shiryaev S.Y.   Nylandsted Larsen A.   Hartung J.   Davies G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 43-46

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The effect of post-growth cooling rate on the defect structure in MBE-grown buried layers of Si 1-x Ge x on Si substrates

By Fatemi M.   Thompson P.E.   Twigg M.E.   Chaudhuri J.  

Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. : 362-371

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Surface roughness of strain-relaxed Si 1-x Ge x layers grown by two-step growth method

By Iwano H.   Yoshikawa K.   Zaima S.   Yasuda Y.  

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X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

By Baribeau J.-M.   Lafontaine H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

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