Influence of Phosphorus Doping in the Active Layer with Deposition Time and Gas Flow Rate in a-Si:H Thin Film Transistor

By Kim Byung-Ju  

Molecular Crystals and Liquid Crystals, Vol. 550, Iss. 1, 2011-11 ,pp. : 112-118

Taylor & Francis Ltd

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The effect of growth temperature on electrical conductivity and on the structure of thin refractory metal films, grown by laser ablation deposition

By Mikhailov G.M.   Malikov I.V.   Chernykh A.V.   Petrashov V.T.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 315-319

Elsevier

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Optimizing the Thin Film Morphology of Organic Field‐Effect Transistors: The Influence of Molecular Structure and Vacuum Deposition Parameters on Device Performance

By Locklin Jason   Roberts Mark   Mannsfeld Stefan   Bao Zhenan  

Journal of Macromolecular Science, Part C: Polymer Reviews, Vol. 46, Iss. 1, 2006-01 ,pp. : 79-101

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Growth rate and microstructure of copper thin films deposited with metal-organic chemical vapor deposition from hexafluoroacetylacetonate copper(I) allyltrimethylsilane

By Son J.-H.   Park M.-Y.   Rhee S.-W.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 229-236

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Influence of the power and pressure on the growth rate and refractive index of a-C:H thin films deposited by r.f. plasma-enhanced chemical vapour deposition

By Benmassaoud A.A.   Paynter R.W.  

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