Structural and optical properties of Si/Si 1-x Ge x wires

By Zhuang Y.   Schelling C.   Stangl J.   Penn C.   Senz S.   Schaffler F.   Roch T.   Daniel A.   Grenzer J.   Pietsch U.   Bauer G.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 409-413

Elsevier

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Si/Si 1-x Ge x and Si/Si 1-y C y heterostructures: materials for high-speed field-effect transistors

By Schaffler F.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 1-10

Elsevier

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Quantification of germanium and boron in heterostructures Si/Si 1-x Ge x /Si by SIMS

By Prudon G.   Gautier B.   Dupuy J.C.   Dubois C.   Bonneau M.   Delmas J.   Vallard J.P.   Bremond G.   Brenier R.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 54-58

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High-speed transport in Si/Si 1-x-y Ge x C y heterostructures

By Muhlberger M.   Schelling C.   Sandersfeld N.   Seyringer H.   Schaffler F.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 306-311

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X-Ray scattering investigation of the interfaces in Si/Si 1-x Ge x superlattices on Si(001) grown by MBE and UHV-CVD

By Baribeau J.-M.   Lafontaine H.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 141-147

Elsevier

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