Influence of misfit strain on {311} facet development in selective epitaxial growth of Si 1-x Ge x /Si(100) grown by gas-source molecular beam epitaxy

Author： D. U'Ren G.   Goorsky M.S.   Wang K.L.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.365, Iss.1, 2000-04, pp. : 147-150

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