Formation of size controlled Ge nanocrystals in SiO 2 matrix by ion implantation and annealing

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 100-103

Elsevier

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Defect-related photoluminescence and Raman studies on the growth of Ge nanocrystals during annealing of Ge + -implanted SiO 2 films

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Thin Solid Films, Vol. 413, Iss. 1, 2002-06 ,pp. : 177-180

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Structural properties of Ge nano-crystals embedded in SiO 2 films from X-ray diffraction and Raman spectroscopy

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Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 58-62

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Synthesis of SiGeC layers by ion implantation of Ge and C

By Kurata H.   Ohfuti M.   Futatsugi T.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 217-221

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Low temperature UV oxidation of SiGe for preparation of Ge nanocrystals in SiO 2

By Craciun V.   Reader A.H.   Vandenhoudt D.E.W.   Best S.P.   Hutton R.S.   Andrei A.   Boyd I.W.  

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