Structural properties of Ge nano-crystals embedded in SiO 2 films from X-ray diffraction and Raman spectroscopy

By Rolo A.G.   Vasilevskiy M.I.   Conde O.   Gomes M.J.M.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 58-62

Elsevier

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Synthesis of Ge nanocrystals in thermal SiO 2 films by Ge + ion implantation

By Zhang J.-Y.   Bao X.-M.   Ye Y.-H.  

Thin Solid Films, Vol. 323, Iss. 1, 1998-06 ,pp. : 68-71

Elsevier

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Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO₂ layers

By Prucnal S.   Sun J.M.   Nazarov A.   Tjagulskii I.P.   Osiyuk I.N.   Fedaruk R.   Skorupa W.  

Applied Physics B, Vol. 88, Iss. 2, 2007-07 ,pp. : 241-244

Springer Publishing Company

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Pattern evolution of crystalline Ge aggregates during annealing of an Al/Ge bilayer film deposited on a SiO2 substrate

By Doi M.   Suzuki Y.   Koyama T.   Katsuki F.  

Philosophical Magazine Letters, Vol. 78, Iss. 3, 1998-09 ,pp. : 241-245

Taylor & Francis Ltd

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Formation of size controlled Ge nanocrystals in SiO 2 matrix by ion implantation and annealing

By Yamamoto M.   Koshikawa T.   Yasue T.   Harima H.   Kajiyama K.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 100-103

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