Characteristics of the thermal oxidation of heavily boron-doped polycrystalline silicon thin films

By Boukezzata M.   Bielle-Daspet D.   Sarrabayrouse G.   Mansour F.  

Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 145-154

Elsevier

Access to resources Recommend Favorite

In situ boron-doped LPCVD polysilicon with low tensile stress for MEMS applications

By Ylonen M.   Torkkeli A.   Kattelus H.  

Sensors and Actuators A: Physical, Vol. 109, Iss. 1, 2003-12 ,pp. : 79-87

Elsevier

Access to resources Recommend Favorite

Doping and electrical characteristics of in-situ heavily B-doped Si 1-x-y Ge x C y films epitaxially grown using ultraclean LPCVD

By Noda T.   Lee D.   Shim H.   Sakuraba M.   Matsuura T.   Murota J.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 57-60

Elsevier

Access to resources Recommend Favorite

Characterization of boron-doped tin oxide thin films

By Nasser S.A.  

Thin Solid Films, Vol. 342, Iss. 1, 1999-03 ,pp. : 47-51

Elsevier

Access to resources Recommend Favorite

Microwave Properties of In Situ Grown MgB 2 Superconducting Thin Films

By Andreone A.   Di Gennaro E.   Lamura G.   Chiarella F.   Vaglio R.  

Journal of Superconductivity: Incorporating Novel Magnetism, Vol. 16, Iss. 5, 2003-10 ,pp. : 807-813

Springer Publishing Company

Access to resources Recommend Favorite