Hydrogenation in laser annealed polysilicon thin-film transistors (TFTs)

By Farmakis F.V.   Tsamados D.M.   Brini J.   Kamarinos G.   Dimitriadis C.A.   Miyasaka M.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 151-153

Elsevier

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Stability of unhydrogenated polysilicon thin film transistors and structural quality of the channel material

By Toutah H.   Tala-Ighil B.   Llibre J.F.   Rahal A.   Mourgues K.   Helen Y.   Mohammed-Brahim T.   Dassow R.   Kohler J.R.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 299-302

Elsevier

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Temperature analysis of polysilicon thin-film transistors made by excimer laser crystallization

By Foglietti V.   Mariucci L.   Fortunato G.  

Thin Solid Films, Vol. 337, Iss. 1, 1999-01 ,pp. : 196-199

Elsevier

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Silicon oxide conductivity of hydrogen ion implanted polysilicon thin film transistors

By Gueorguiev V.   Ivanov T.   Andreev S.   Popova L.  

Vacuum, Vol. 47, Iss. 10, 1996-10 ,pp. : 1203-1205

Elsevier

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High performance polysilicon thin film transistors by H 2 O plasma hydrogenation

By Lee K.Y.   Fang Y.K.   Chen C.W.   Liang M.S.   Wuu S.G.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 327-329

Elsevier

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