A simple low-temperature laser-doping employing phosphosilicate glass and borosilicate glass films for the source and drain formation in poly-Si thin film transistors

By Kim C.-H.   Jung S.-H.   Jeon J.-H.   Han M.-K.  

Thin Solid Films, Vol. 397, Iss. 1, 2001-10 ,pp. : 4-7

Elsevier

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Influences of directional crystallization using field aided lateral crystallization on the electrical characteristics of poly-Si thin film transistors

By Lee J.-B.   Choi D.-K.   Yang Y.-H.  

Thin Solid Films, Vol. 408, Iss. 1, 2002-04 ,pp. : 240-244

Elsevier

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Excimer laser annealed poly-Si thin film transistor with self-aligned lightly doped drain structure

By Kim Y.-H.   Hwang C.-S.   Song Y.-H.   Chung C.-H.   Ko Y.-W.   Sohn C.-Y.   Kim B.-C.   Lee J.H.  

Thin Solid Films, Vol. 440, Iss. 1, 2003-09 ,pp. : 169-173

Elsevier

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Comparison of poly-Si films deposited by UHVCVD and LPCVD and its application for thin film transistors

By Peng D.Z.   Zan H.W.   Shih P.S.   Chang T.C.   Lin C.W.   Chang C.Y.  

Vacuum, Vol. 67, Iss. 3, 2002-09 ,pp. : 641-645

Elsevier

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Preparation of poly-Si films by Cat-CVD for thin film transistor

By Sunayama H.   Yamada K.   Karasawa M.   Ishibashi K.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 226-229

Elsevier

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