Surface reaction processes in C 4 F 8 and C 5 F 8 plasmas for selective etching of SiO 2 over photo-resist

By Motomura H.   Imai S.-i.   Tachibana K.  

Thin Solid Films, Vol. 390, Iss. 1, 2001-06 ,pp. : 134-138

Elsevier

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Difference between C 4 F 8 and C 5 F 8 plasmas in surface reaction processes for selective etching of SiO 2 over Si 3 N 4

By Motomura H.   Imai S.-i.   Tachibana K.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 243-248

Elsevier

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Radical kinetics for polymer film deposition in fluorocarbon (C 4 F 8 , C 3 F 6 and C 5 F 8 ) plasmas

By Takahashi K.   Itoh A.   Nakamura T.   Tachibana K.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 303-310

Elsevier

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Correlation between CF 2 and C x F y densities in C 4 F 8 plasmas

By Sasaki K.   Takizawa K.   Takada N.   Kadota K.  

Thin Solid Films, Vol. 374, Iss. 2, 2000-10 ,pp. : 249-255

Elsevier

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Behaviors of electron and negative-ion densities in low-pressure high-density inductively coupled plasmas of SF 6 , NF 3 , CF 4 , and C 4 F 8 gases diluted with Ar

By Kono A.   Konishi M.   Kato K.  

Thin Solid Films, Vol. 407, Iss. 1, 2002-03 ,pp. : 198-203

Elsevier

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