Structural and chemical stability of Ta-Si-N thin film between Si and Cu

By Lee Y.-J.   Suh B.-S.   Rha S.-K.   Park C.-O.  

Thin Solid Films, Vol. 320, Iss. 1, 1998-05 ,pp. : 141-146

Elsevier

Access to resources Recommend Favorite

Structure and thermal stability of graded Ta-TaN diffusion barriers between Cu and SiO 2

By Hubner R.   Hecker M.   Mattern N.   Hoffmann V.   Wetzig K.   Wenger C.   Engelmann H.-J.   Wenzel C.   Zschech E.   Bartha J.W.  

Thin Solid Films, Vol. 437, Iss. 1, 2003-08 ,pp. : 248-256

Elsevier

Access to resources Recommend Favorite

Effect of vacuum rapid thermal annealing on the properties of SiN x films

By Beshkov G.   Dimitrov D.B.   Velchev N.   Petrov P.   Ivanov B.   Zambov L.   Dimitrova T.  

Vacuum, Vol. 58, Iss. 2, 2000-08 ,pp. : 509-515

Elsevier

Access to resources Recommend Favorite

Electrical resistivity, structure and composition of d.c. sputtered WN x films

By Boukhris L.   Poitevin J.-M.  

Thin Solid Films, Vol. 310, Iss. 1, 1997-11 ,pp. : 222-227

Elsevier

Access to resources Recommend Favorite

Evaluation of tantalum silicide sputtering target materials for amorphous Ta-Si-N diffusion barrier for Cu metallization

By Ivanov E.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 325-328

Elsevier

Access to resources Recommend Favorite