Effects of CH 4 /SiH 4 flow ratio and microwave power on the growth of -SiC on Si by ECR-CVD using CH 4 /SiH 4 /Ar at 200 o C

Author: Lee W.-H.   Lin J.-C.   Lee C.   Cheng H.-C.   Yew T.-R.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.405, Iss.1, 2002-02, pp. : 17-22

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Abstract