Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures

By Madhavi S.   Venkataraman V.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 333-337

Elsevier

Access to resources Recommend Favorite

Effective mass measurement in two-dimensional hole gas in strained Si 1-x-y Ge x C y / Si(100) modulation doped heterostructures

By Chang C.L.   Shukla S.P.   Pan W.   Venkataraman V.   Sturm J.C.   Shayegan M.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 51-54

Elsevier

Access to resources Recommend Favorite

SiGe - heterostructures for CMOS technology

By Whall T.E.   Parker E.H.C.  

Thin Solid Films, Vol. 367, Iss. 1, 2000-05 ,pp. : 250-259

Elsevier

Access to resources Recommend Favorite

Carrier mobilities in modulation doped Si 1-x Ge x heterostructures with respect to FET applications

By Hock G.   Gluck M.   Hackbarth T.   Herzog H.-J.   Kohn E.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 141-144

Elsevier

Access to resources Recommend Favorite

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

By Bolkhovityanov Y.B.   Gutakovskii A.K.   Mashanov V.I.   Pchelyakov O.P.   Revenko M.A.   Sokolov L.V.  

Thin Solid Films, Vol. 392, Iss. 1, 2001-07 ,pp. : 98-106

Elsevier

Access to resources Recommend Favorite