Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Author： Bolkhovityanov Y.B.   Gutakovskii A.K.   Mashanov V.I.   Pchelyakov O.P.   Revenko M.A.   Sokolov L.V.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.392, Iss.1, 2001-07, pp. : 98-106

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

A novel structure in Ge/Si epilayers grown at low temperature

By Cheng H.H.   Chia C.T.   Markov V.A.   Guo X.J.   Chen C.C.   Peng Y.H.   Kuan C.H.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 182-184

Elsevier

Access to resources Recommend Favorite

Defect-free strain relaxation in locally MBE-grown SiGe heterostructures

By Eisele I.   Rupp T.   Kaesen F.   Hansch W.   Hammerl E.   Gravesteijn D.J.   Schorer R.   Silveira E.   Abstreiter G.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 27-32

Elsevier

Access to resources Recommend Favorite

Structural and optical characterisation of undoped Si-Si 0.78 Ge 0.22 /Si(001) superlattices grown by MBE

By Mironov O.A.   Parker E.H.C.   Phillips P.J.   Dowsett M.G.   Barradas N.P.   Jeynes C.   Mironov M.   Gnezdilov V.P.   Ushakov V.   Eremenko V.V.  

Thin Solid Films, Vol. 306, Iss. 2, 1997-09 ,pp. : 307-312

Elsevier

Access to resources Recommend Favorite

Ge/Si core/shell nanowires with controlled low temperature grown Si shell thickness

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 7, 2015-07 ,pp. : 1578-1581

John Wiley & Sons Inc

Access to resources Recommend Favorite

Improvement of the crystallinity of a GaAs epitaxial film grown on a Si substrate using a Si/SiGe/Ge buffer layer

By Woo Y.D.   Kang T.W.   Kim T.W.  

Thin Solid Films, Vol. 279, Iss. 1, 1996-06 ,pp. : 166-168

Elsevier

Access to resources Recommend Favorite