Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures

By Madhavi S.   Venkataraman V.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 333-337

Elsevier

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Effective mass measurement in two-dimensional hole gas in strained Si 1-x-y Ge x C y / Si(100) modulation doped heterostructures

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Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 51-54

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Quantification of germanium and boron in heterostructures Si/Si 1-x Ge x /Si by SIMS

By Prudon G.   Gautier B.   Dupuy J.C.   Dubois C.   Bonneau M.   Delmas J.   Vallard J.P.   Bremond G.   Brenier R.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 54-58

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Influence of grown-in defects on the optical and electrical properties of Si/Si 1-x Ge x /Si heterostructures

By Loo R.   Caymax M.   Simoen E.   Howard D.   Goryll M.   Klaes D.   Vescan L.   Gravesteijn D.   Pettersson H.   Zhang X.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 227-231

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Hole mobilities in pseudomorphic Si 1-x-y Ge x C y alloy layers

By Duschl R.   Seeberger H.   Eberl K.  

Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. : 336-339

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