Optical characterization by spectroscopic ellipsometry of polycrystalline Si 1-x Ge x of variable Ge composition up to 100% Ge

By Ferrieu F.   Morin C.   Regolini J.L.  

Thin Solid Films, Vol. 315, Iss. 1, 1998-03 ,pp. : 316-321

Elsevier

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Spectroscopic ellipsometry of Si x Ge 1-x /Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

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Thin Solid Films, Vol. 373, Iss. 1, 2000-09 ,pp. : 211-215

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Optical and electrical properties of Si 1-x-y Ge x C y thin films and devices

By St. Amour A.   Chang C.L.   Lanzerotti L.D.   Sturm J.C.  

Thin Solid Films, Vol. 294, Iss. 1, 1997-02 ,pp. : 112-117

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Atomistic models of dislocation formation at crystal surface ledges in Si1-xGex/Si(100) heteroepitaxial thin films

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Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 79, Iss. 2, 1999-02 ,pp. : 349-370

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Heteroepitaxial Si 1-x-y Ge x C y films on (100)Si substrates for future low-power applications

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