Plasma processed ultra-thin SiO 2 interfaces for advanced silicon NMOS and PMOS devices: applications to Si-oxide/Si oxynitride, Si-oxide/Si nitride and Si-oxide/transition metal oxide stacked gate dielectrics

Author： Lucovsky G.   Yang H.   Wu Y.   Niimi H.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.374, Iss.2, 2000-10, pp. : 217-227

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electrical Stability Impact of Gate Oxide in Channel Implanted SiC NMOS and PMOS Transistors

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 513-516

Trans Tech Publications

Access to resources Recommend Favorite

Ultra-thin silicon-oxide films by sputter-deposition and their application to high-quality poly-Si TFTS

By Serikawa T.   Shirai S.  

Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. : 781-783

Elsevier

Access to resources Recommend Favorite

Properties of SiO2/4H-SiC Interfaces with an Oxide Deposited by a High-Temperature Process

By  

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 331-334

Trans Tech Publications

Access to resources Recommend Favorite

Patterning: N2‐Plasma‐Assisted One‐Step Alignment and Patterning of Graphene Oxide on a SiO2/Si Substrate Via the Langmuir–Blodgett Technique (Adv. Mater. Interfaces 5/2015)

By  

ADVANCED MATERIALS INTERFACES (ELECTRONIC), Vol. 2, Iss. 5, 2015-03 ,pp. : n/a-n/a

John Wiley & Sons Inc

Access to resources Recommend Favorite

Time Resolved Gate Oxide Stress of 4H-SiC Planar MOSFETs and NMOS Capacitors

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 611-614

Trans Tech Publications

Access to resources Recommend Favorite