Microstructure of -FeSi 2 thin films prepared by pulsed laser deposition

By Yoshitake T.   Nagamoto T.   Nagayama K.  

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 236-243

Elsevier

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Formation of 'environmentally friendly' semiconductor ( -FeSi 2 ) thin films prepared by ion beam sputter deposition (IBSD) method

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Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 73-76

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Structural and optical properties of TiO 2 thin film and TiO 2 +2 wt.% ZnFe 2 O 4 composite film prepared by r.f. sputtering

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Thin Solid Films, Vol. 368, Iss. 1, 2000-06 ,pp. : 164-167

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Thermoelectric properties of Ru- or Ge-doped -FeSi 2 films prepared by electron beam deposition

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Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 296-302

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Growth of -FeSi 2 and FeSi layers by reactive deposition using Sb-related intermetallic compounds

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Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 248-252

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