Formation of 'environmentally friendly' semiconductor ( -FeSi 2 ) thin films prepared by ion beam sputter deposition (IBSD) method

By Sasase M.   Nakanoya T.   Yamamoto H.   Hojou K.  

Thin Solid Films, Vol. 401, Iss. 1, 2001-12 ,pp. : 73-76

Elsevier

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Spectral sensitivity enhancement by thin film of -FeSi 2 -Si composite prepared by RF-sputtering deposition

By Okajima K.   Yamatsugu H.   Wen C.   Sudoh M.   Yamada K.  

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 267-275

Elsevier

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Thermoelectric properties of Ru- or Ge-doped -FeSi 2 films prepared by electron beam deposition

By Tsunoda T.   Mukaida M.   Imai Y.  

Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 296-302

Elsevier

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Properties of copper-scandium oxide thin films prepared by pulsed laser deposition

By Kakehi Y.   Nakao S.   Satoh K.   Yotsuya T.  

Thin Solid Films, Vol. 445, Iss. 2, 2003-12 ,pp. : 294-298

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Epitaxial growth characteristics of oxide thin films prepared by pulsed laser deposition

By Li M.   Wang Z.   Xiong G.   Fan S.   Zhao Q.   Lin K.  

Thin Solid Films, Vol. 375, Iss. 1, 2000-10 ,pp. : 271-274

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