Phenomenological model of reactive r.f.-magnetron sputtering of Si in Ar/O 2 atmosphere for the prediction of SiO x thin film stoichiometry from process parameters

Author： Seifarth H.   Schmidt J.U.   Grotzschel R.   Klimenkov M.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.389, Iss.1, 2001-06, pp. : 108-115

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