Coverage properties of silicon nitride film prepared by the Cat-CVD method

By Osono S.   Uchiyama Y.   Kitazoe M.   Saito K.   Hayama M.   Masuda A.   Izumi A.   Matsumura H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 165-169

Elsevier

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Substrate influence on the properties of doped thin silicon layers grown by Cat-CVD

By Soler D.   Fonrodona M.   Voz C.   Asensi J.M.   Bertomeu J.   Andreu J.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 157-160

Elsevier

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Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

By Voz C.   Martin I.   Orpella A.   Puigdollers J.   Vetter M.   Alcubilla R.   Soler D.   Fonrodona M.   Bertomeu J.   Andreu J.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 270-273

Elsevier

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Shutterless deposition of phosphorous doped microcrystalline silicon by Cat-CVD

By Fonrodona M.   Gordijn A.   van Veen M.K.   van der Werf C.H.M.   Bertomeu J.   Andreu J.   Schropp R.E.I.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 145-148

Elsevier

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Charge-trapping defects in Cat-CVD silicon nitride films

By Umeda T.   Mochizuki Y.   Miyoshi Y.   Nashimoto Y.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 266-269

Elsevier

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