Author: Osono S. Uchiyama Y. Kitazoe M. Saito K. Hayama M. Masuda A. Izumi A. Matsumura H.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.430, Iss.1, 2003-04, pp. : 165-169
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Electrical transport properties of microcrystalline silicon thin films prepared by Cat-CVD
By Liu F. Zhu M. Feng Y. Han Y. Liu J.
Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. :
Charge-trapping defects in Cat-CVD silicon nitride films
By Umeda T. Mochizuki Y. Miyoshi Y. Nashimoto Y.
Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. :
Formation of silicon films for solar cells by the Cat-CVD method
By Komoda M. Kamesaki K. Masuda A. Matsumura H.
Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. :