Coverage properties of silicon nitride film prepared by the Cat-CVD method

By Osono S.   Uchiyama Y.   Kitazoe M.   Saito K.   Hayama M.   Masuda A.   Izumi A.   Matsumura H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 165-169

Elsevier

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Electrical transport properties of microcrystalline silicon thin films prepared by Cat-CVD

By Liu F.   Zhu M.   Feng Y.   Han Y.   Liu J.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 97-100

Elsevier

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Formation of silicon films for solar cells by the Cat-CVD method

By Komoda M.   Kamesaki K.   Masuda A.   Matsumura H.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 198-201

Elsevier

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Low temperature silicon nitride deposited by Cat-CVD for deep sub-micron metal-oxide-semiconductor devices

By Patil S.B.   Kumbhar A.   Waghmare P.   Ramgopal Rao V.   Dusane R.O.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 270-274

Elsevier

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Surface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films

By Voz C.   Martin I.   Orpella A.   Puigdollers J.   Vetter M.   Alcubilla R.   Soler D.   Fonrodona M.   Bertomeu J.   Andreu J.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 270-273

Elsevier

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