Interfacial and structural characteristics of CeO 2 films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment

Author： Kang J.   Xun K.   Liu X.   Han R.   Wang Y.   Yu D.P.   Lian G.J.   Xiong G.C.   Wu S.C.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.416, Iss.1, 2002-09, pp. : 122-128

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Optical and structural properties of reactive ion beam sputter deposited CeO 2 films

By Mohan S.   Kanakaraju S.   Sood A.K.  

Thin Solid Films, Vol. 305, Iss. 1, 1997-08 ,pp. : 191-195

Elsevier

Access to resources Recommend Favorite

A study of the interface of CeO 2 &unknown;Si heterostructure grown by ion beam deposition

By Wu Z.   Huang D.   Yang X.  

Vacuum, Vol. 51, Iss. 3, 1998-11 ,pp. : 397-401

Elsevier

Access to resources Recommend Favorite

Identification of induced reaction during XPS depth profile measurements of CeO 2 /Si films grown by ion beam epitaxy

By Wu Z.   Huang D.   Yang X.   Qin F.   Zhang J.   Wang J.   Yang Z.  

Vacuum, Vol. 49, Iss. 2, 1998-02 ,pp. : 133-137

Elsevier

Access to resources Recommend Favorite

Mechanism of induced reaction during XPS depth profile measurements of CeO 2 /Si films grown by ion beam epitaxy

By Yang X.   Wu Z.   Zhao J.   Wang H.   Huang D.   Qin F.  

Vacuum, Vol. 49, Iss. 2, 1998-02 ,pp. : 139-143

Elsevier

Access to resources Recommend Favorite

Physicochemical and Redox Characteristics of Fe Ion‐doped CeO2 Nanoparticles

By  

JOURNAL OF THE CHINESE CHEMICAL SOCIETY (ELECTRONIC), Vol. 62, Iss. 10, 2015-10 ,pp. : 925-932

John Wiley & Sons Inc

Access to resources Recommend Favorite