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Elsevier

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Mechanism of induced reaction during XPS depth profile measurements of CeO 2 /Si films grown by ion beam epitaxy

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Vacuum, Vol. 49, Iss. 2, 1998-02 ,pp. : 139-143

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Studies of highly oriented CeO 2 films grown on Si(111) by pulsed laser deposition

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Interfacial and structural characteristics of CeO 2 films on silicon with a nitrided interface formed by nitrogen-ion-beam bombardment

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Characteristics of Y 2 O 3 films on Si(111) grown by oxygen-ion beam-assisted deposition

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