Author: Lu J. Xu T. Zhang P. Yang S. Qi S. Xue Q.
Publisher: Elsevier
ISSN: 0040-6090
Source: Thin Solid Films, Vol.416, Iss.1, 2002-09, pp. : 153-159
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Influence of Phosphorus Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Effect of hydrogen ion implantation on the physical properties of SiO 2 /Si system
By Szekeres A. Alexandrova S. Paneva A.
Vacuum, Vol. 58, Iss. 2, 2000-08 ,pp. :
By Oyoshi K. Lenssen D. Carius R. Mantl S.
Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. :