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Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 202-208

Elsevier

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Study of structure and optical properties of -FeSi 2 precipitates formed by ion-implantation of Fe + in Si(100) and effects of co-implantation of Fe + and Si + in amorphous SiO 2

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Thin Solid Films, Vol. 381, Iss. 2, 2001-01 ,pp. : 194-201

Elsevier

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The effect of ultrasound on the Si‐SiO2 system

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John Wiley & Sons Inc

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Synthesis of Ge nanocrystals in thermal SiO 2 films by Ge + ion implantation

By Zhang J.-Y.   Bao X.-M.   Ye Y.-H.  

Thin Solid Films, Vol. 323, Iss. 1, 1998-06 ,pp. : 68-71

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Formation of size controlled Ge nanocrystals in SiO 2 matrix by ion implantation and annealing

By Yamamoto M.   Koshikawa T.   Yasue T.   Harima H.   Kajiyama K.  

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