Effects of Y incorporation in TaON gate dielectric on electrical performance of GaAs metal–oxide–semiconductor capacitor

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6270|10|9|703-707

ISSN： 1862-6254

Source： PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol.10, Iss.9, 2016-09, pp. : 703-707

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Influence of rapid thermal annealing on the electrical characteristics of GaAs metal-oxide-semiconductor structures with a double oxide layer

By Eftekhari G.

Thin Solid Films, Vol. 257, Iss. 1, 1995-02 ,pp. : 110-115

Elsevier

Access to resources Recommend Favorite

Characterisation of metal oxide semiconductor capacitor structure using low-k dielectric methylsilsesquioxane with evaporated aluminium and copper gate

By Aw K.C. Ibrahim K.

Thin Solid Films, Vol. 434, Iss. 1, 2003-06 ,pp. : 178-182

Elsevier

Access to resources Recommend Favorite

Gate-oxide integrity in metal-oxide-semiconductor structures with Ti-polycide gates for ULSI applications

By Ko D.-H. Lee N.I. Kim Y.W. Lee M.Y.

Thin Solid Films, Vol. 326, Iss. 1, 1998-08 ,pp. : 56-59

Elsevier

Access to resources Recommend Favorite

The impact of gate oxide scaling (3.2-1.2 nm) on sub-100 nm complementary metal-oxide-semiconductor field-effect transistors

By Yeh W.-k. Lin C.-y.

Thin Solid Films, Vol. 419, Iss. 1, 2002-11 ,pp. : 218-224

Elsevier

Access to resources Recommend Favorite

Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics

By Ramgopal Rao V. Hansch W. Baumgartner H. Eisele I. Sharma D.K. Vasi J. Grabolla T.

Thin Solid Films, Vol. 296, Iss. 1, 1997-03 ,pp. : 37-40

Elsevier

Access to resources Recommend Favorite