Characterization of Cat-CVD grown Si-C and Si-C-O dielectric films for ULSI applications

By Takatsuji K.   Kawakami M.   Makita Y.   Murakami K.   Nakayama H.   Miura Y.   Shimoyama N.   Machida H.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 116-119

Elsevier

Access to resources Recommend Favorite

Effects of CH 4 /SiH 4 flow ratio and microwave power on the growth of -SiC on Si by ECR-CVD using CH 4 /SiH 4 /Ar at 200 o C

By Lee W.-H.   Lin J.-C.   Lee C.   Cheng H.-C.   Yew T.-R.  

Thin Solid Films, Vol. 405, Iss. 1, 2002-02 ,pp. : 17-22

Elsevier

Access to resources Recommend Favorite

Effect of hydrogen radical on growth of c-Si in hetero-structured SiC x alloy films

By Itoh T.   Fukunaga K.   Fujiwara T.   Nonomura S.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 33-36

Elsevier

Access to resources Recommend Favorite

Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat-CVD using acetylene

By Kumbhar A.   Patil S.B.   Kumar S.   Lal R.   Dusane R.O.  

Thin Solid Films, Vol. 395, Iss. 1, 2001-09 ,pp. : 244-248

Elsevier

Access to resources Recommend Favorite

Growth and characterization of SiC layers obtained by microwave-CVD

By Mandracci P.   Ferrero S.   Cicero G.   Giorgis F.   Pirri C.F.   Barucca G.   Reitano R.   Musumeci P.   Calcagno L.   Foti G.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 169-171

Elsevier

Access to resources Recommend Favorite