Concentration and thermal release of hydrogen in amorphous silicon carbide films prepared by rf sputtering

By Suzaki Y.   Shikama T.   Yoshioka S.   Yoshii K.   Yasutake K.  

Thin Solid Films, Vol. 311, Iss. 1, 1997-12 ,pp. : 207-211

Elsevier

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Properties of high growth rate amorphous silicon deposited by MC-RF-PECVD

By Lavareda G.   Nunes de Carvalho C.   Amaral A.   Conde J.P.   Vieira M.   Chu V.  

Vacuum, Vol. 64, Iss. 3, 2002-01 ,pp. : 245-248

Elsevier

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Structural and optical properties of amorphous hydrogenated fluorinated carbon films produced by PECVD

By Bica de Moraes M.A.   Durrant S.F.   Castro S.G.C.   Galvao D.S.   Bolivar-Marinez L.E.  

Thin Solid Films, Vol. 304, Iss. 1, 1997-07 ,pp. : 149-156

Elsevier

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Er-doping effects on properties of amorphous silicon films prepared by electron beam evaporations

By Gan R.   Wang J.  

Thin Solid Films, Vol. 293, Iss. 1, 1997-01 ,pp. : 63-66

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Effect of hydrogen dilution on the optical properties of hydrogenated amorphous silicon-nitrogen films prepared by plasma deposition

By Yamaguchi Masaaki  

Philosophical Magazine, Vol. 83, Iss. 25, 2003-09 ,pp. : 2955-2972

Taylor & Francis Ltd

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