Properties of high growth rate amorphous silicon deposited by MC-RF-PECVD

Author: Lavareda G.   Nunes de Carvalho C.   Amaral A.   Conde J.P.   Vieira M.   Chu V.  

Publisher: Elsevier

ISSN: 0042-207X

Source: Vacuum, Vol.64, Iss.3, 2002-01, pp. : 245-248

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Abstract