Focused ion beam preparation of inclined planes in semiconductor materials

Author： Khamsehpour B.   Davies S.T.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.47, Iss.5, 1996-05, pp. : 451-454

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Application of focused ion beam milling to cross-sectional TEM specimen preparation of industrial materials including heterointerfaces

By Kuroda K.   Takahashi M.   Kato T.   Saka H.   Tsuji S.  

Thin Solid Films, Vol. 319, Iss. 1, 1998-04 ,pp. : 92-96

Elsevier

Access to resources Recommend Favorite

Preparative Methods for Nanoanalysis of Materials with Focused Ion Beam Instruments

By Nellen Philipp M.   Callegari Victor   Sennhauser Urs  

CHIMIA International Journal for Chemistry, Vol. 60, Iss. 11, 2006-11 ,pp. : 735-741

Swiss Chemical Society

Access to resources Recommend Favorite

Preparation of transmission electron microscopy cross‐section specimens of crack tips using focused ion beam milling

By  

JOURNAL OF MICROSCOPY, Vol. 207, Iss. 2, 2002-08 ,pp. : 129-136

John Wiley & Sons Inc

Access to resources Recommend Favorite

Nanomachining of nanocrystalline nickel by focused ion beam

By Hosokawa Hiroyuki  

Philosophical Magazine Letters, Vol. 84, Iss. 11, 2004-11 ,pp. : 713-718

Taylor & Francis Ltd

Access to resources Recommend Favorite

Focused ion beam machining and deposition for nanofabrication

By Davies S.T.   Khamsehpour B.  

Vacuum, Vol. 47, Iss. 5, 1996-05 ,pp. : 455-462

Elsevier

Access to resources Recommend Favorite