Author: Kikkawa S. Sugiyama H. Ohmura T. Kanamaru F. Hinomura T. Nasu S.
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.47, Iss.6, 1996-06, pp. : 863-866
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Carbon nitride thin films formation by N 2 + ion implantation
By Palacio C. Diaz D. Gomez-Aleixandre C. Garcia M.M.
Vacuum, Vol. 48, Iss. 7, 1997-09 ,pp. :
Cubic BN formation by ion implantation
By Hu C. Wu Q.M.J. Shen J. Kotake S. Suzuki Y.
Thin Solid Films, Vol. 402, Iss. 1, 2002-01 ,pp. :
AES analysis of silicon nitride formation by 10 keV N + and N 2 + ion implantation
By Pan J.S. Wee A.T.S. Huan C.H.A. Tan H.S. Tan K.L.
Vacuum, Vol. 47, Iss. 12, 1996-12 ,pp. :
The effects of fluorine ion implantation on the formation of SIMOX structure
Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. :