Author: Safrankova
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.51, Iss.2, 1998-10, pp. : 165-167
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
The crystalline properties of nitrogen doped hydrogenated microcrystalline silicon thin films
By Ehara T.
Thin Solid Films, Vol. 310, Iss. 1, 1997-11 ,pp. :
Properties of amorphous silicon carbide films prepared by PECVD
By Huran J. Hrubcin L. Kobzev A.P. Liday J.
Vacuum, Vol. 47, Iss. 10, 1996-10 ,pp. :
Defects in nitrogen-doped multicrystalline silicon
By Yang D. Li D. Ghosh M. Moller H.J.
Physica B, Vol. 344, Iss. 1, 2004-02 ,pp. :
Photoluminescence from thin porous films of silicon carbide
By Parkhutik V.P. Namavar F. Andrade E.
Thin Solid Films, Vol. 297, Iss. 1, 1997-04 ,pp. :