![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Safrankova
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.51, Iss.2, 1998-10, pp. : 165-167
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
The crystalline properties of nitrogen doped hydrogenated microcrystalline silicon thin films
By Ehara T.
Thin Solid Films, Vol. 310, Iss. 1, 1997-11 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Properties of amorphous silicon carbide films prepared by PECVD
By Huran J. Hrubcin L. Kobzev A.P. Liday J.
Vacuum, Vol. 47, Iss. 10, 1996-10 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Defects in nitrogen-doped multicrystalline silicon
By Yang D. Li D. Ghosh M. Moller H.J.
Physica B, Vol. 344, Iss. 1, 2004-02 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Photoluminescence from thin porous films of silicon carbide
By Parkhutik V.P. Namavar F. Andrade E.
Thin Solid Films, Vol. 297, Iss. 1, 1997-04 ,pp. :