The dynamics of recrystallization and melting of implanted silicon at irradiation by powerful light pulses

Author： Fattakhov Y.V.   Galyautdinov M.F.   Lvova T.N.   Khaibullin I.B.  

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.51, Iss.2, 1998-10, pp. : 255-259

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

In situ investigation of phase transitions of implanted silicon at powerful light irradiation

By Fattakhov Y.V.   Galyautdinov M.F.   L'vova T.N.   Khaibullin I.B.  

Vacuum, Vol. 63, Iss. 4, 2001-08 ,pp. : 649-655

Elsevier

Access to resources Recommend Favorite

Recrystallization and diffusion in sodium-implanted silicon

By Bolse W.   Wang W.H.   Illgner C.   Lieb K.P.   Keinonen J.   Ewert J.C.  

Thin Solid Films, Vol. 295, Iss. 1, 1997-02 ,pp. : 169-177

Elsevier

Access to resources Recommend Favorite

Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing

By Miro S.  

Philosophical Magazine Letters, Vol. 92, Iss. 11, 2012-11 ,pp. : 633-639

Taylor & Francis Ltd

Access to resources Recommend Favorite

Influence of amorphization-recrystallization processes on distribution of selenium and oxygen atoms implanted in silicon

By Tishkovsky E.   Feklistov K.   Taskin A.   Zatolokin M.  

Vacuum, Vol. 70, Iss. 2, 2003-03 ,pp. : 153-156

Elsevier

Access to resources Recommend Favorite

Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal

By  

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 540-543

Trans Tech Publications

Access to resources Recommend Favorite