

Author: Yanovsky A.S. Kolomoets S.V.
Publisher: Elsevier
ISSN: 0042-207X
Source: Vacuum, Vol.54, Iss.1, 1999-07, pp. : 47-51
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content


Role of hydrogen during Si capping of strained Ge or Si 1-x Ge x hut clusters
By Dentel D. Bischoff J.L. Kubler L. Bolmont D.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :






Growth of Ge on H-terminated Si(111) surface
By Ishii K. Kuriyama H. Ezoe K. Yamamoto T. Ikeda M. Matsumoto S.
Thin Solid Films, Vol. 336, Iss. 1, 1998-12 ,pp. :


Ultrathin films of Ge on the Si(100)2 × 1 surface
SURFACE AND INTERFACE ANALYSIS, Vol. 50, Iss. 2, 2018-02 ,pp. :