RF hydrogen-plasma-induced defects in p-Si/SiO 2 structures with submicron thermally grown oxides

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Vacuum, Vol. 69, Iss. 1, 2002-12 ,pp. : 195-200

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Study of thin SiO 2 and its interface formed by thermal oxidation of rf hydrogen plasma-cleaned silicon

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Low-temperature treatment of Si/SiO 2 structures in an RF hydrogen plasma

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Effect of r.f. hydrogen plasma annealing on the properties of Si/SiO 2 interface: a spectroscopic ellipsometry study

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