The deposition and characterisation of CVD tungsten silicide for applications in microelectronics

Author： Bain M.F. Armstrong B.M. Gamble H.S.

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.64, Iss.3, 2002-01, pp. : 227-232

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Chemical vapor deposition of tungsten silicide (WSi x ) for high aspect ratio applications

By Sell B. Sanger A. Schulze-Icking G. Pomplun K. Krautschneider W.

Thin Solid Films, Vol. 443, Iss. 1, 2003-10 ,pp. : 97-107

Elsevier

Access to resources Recommend Favorite

Epitaxial silicide interfaces in microelectronics

By Tung R.T. Ohmi

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 233-239

Elsevier

Access to resources Recommend Favorite

Plasma etching and patterning of CVD diamond at < 100 o C for microelectronics applications

By Ramesham R. Welch W. Neely W.C. Rose M.F. Askew R.F.

Thin Solid Films, Vol. 304, Iss. 1, 1997-07 ,pp. : 245-251

Elsevier

Access to resources Recommend Favorite

Deposition and characterisation of carbon-containing tungsten coatings prepared by reactive magnetron sputtering

By Rebholz C. Schneider J.M. Ziegele H. Rahle B. Leyland A. Matthews A.

Vacuum, Vol. 49, Iss. 4, 1998-04 ,pp. : 265-272

Elsevier

Access to resources Recommend Favorite

Deposition of tungsten thin films by dual frequency inductively coupled plasma assisted CVD

By Colpo P. Rossi F. Gibson N. Gilliland D.

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 21-24

Elsevier

Access to resources Recommend Favorite