SHG and AFM study of PECVD a-Si:H films

Author： Alexandrova S. Danesh P. Maslyanitsyn I.A.

Publisher： Elsevier

ISSN： 0042-207X

Source： Vacuum, Vol.69, Iss.1, 2002-12, pp. : 391-394

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Raman study of a-Si:H films deposited by PECVD at various silane temperatures before glow-discharge

By Liao N.M.

Applied Physics A, Vol. 91, Iss. 2, 2008-05 ,pp. : 349-352

Springer Publishing Company

Access to resources Recommend Favorite

Combining HW-CVD and PECVD techniques to produce a-Si:H films

By Ferreira I. Fortunato E. Martins R.

Thin Solid Films, Vol. 427, Iss. 1, 2003-03 ,pp. : 231-235

Elsevier

Access to resources Recommend Favorite

Effects of gas temperature on optical and transport properties of a-Si:H films deposited by PECVD

By Liao N. -M.

Philosophical Magazine, Vol. 88, Iss. 25, 2008-09 ,pp. : 3051-3057

Taylor & Francis Ltd

Access to resources Recommend Favorite

High rate deposition of a-Si:H and a-SiN x :H by VHF PECVD

By Takagi T. Takechi K. Nakagawa Y. Watabe Y. Nishida S.

Vacuum, Vol. 51, Iss. 4, 1998-12 ,pp. : 751-755

Elsevier

Access to resources Recommend Favorite

Comparative study of properties of a-Si:H films produced by hot-filament CVD, glow discharge CVD and their hybrid version

By Kshirsagar S.T. Kumbhar A.A.

Thin Solid Films, Vol. 283, Iss. 1, 1996-09 ,pp. : 49-56

Elsevier

Access to resources Recommend Favorite