On the chloride vapor-phase epitaxy growth of GaN and its characterization

By Varadarajan E.   Puviarasu P.   Kumar J.   Dhanasekaran R.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 43-49

Elsevier

Access to resources Recommend Favorite

ZnS x Se 1-x heteroepitaxial growth on GaP by metalorganic vapor phase epitaxy

By Lee M.K.   Hong C.W.   Wei S.J.   Chang Y.R.  

Thin Solid Films, Vol. 339, Iss. 1, 1999-02 ,pp. : 1-5

Elsevier

Access to resources Recommend Favorite

The growth of the Cd x Zn 1-x Te epilayers by low-pressure metalorganic vapor-phase epitaxy

By Zhang Z.Z.   Shen D.Z.   Shan C.X.   Zhang J.Y.   Lu Y.M.   Liu Y.C.   Fan X.W.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 211-215

Elsevier

Access to resources Recommend Favorite

The growth mechanism of GaN grown by hydride vapor phase epitaxy in N 2 and H 2 carrier gas

By Liu H.-P.   Tsay J.-D.   Liu W.-Y.   Guo Y.-D.   Hsu J.T.   Chen I.-G.  

Journal of Crystal Growth, Vol. 260, Iss. 1, 2004-01 ,pp. : 79-84

Elsevier

Access to resources Recommend Favorite

Transmission electron microscopy study of an AlN nucleation layer for the growth of GaN on a 7-degree off-oriented (001) Si substrate by metalorganic vapor phase epitaxy

By Tanaka S.   Honda Y.   Kameshiro N.   Iwasaki R.   Sawaki N.   Tanji T.   Ichihashi M.  

Journal of Crystal Growth, Vol. 260, Iss. 3, 2004-01 ,pp. : 360-365

Elsevier

Access to resources Recommend Favorite