Strain-dependent intersubband absorption in the valence band of SiGe quantum wells

By Yakimov A I   Kirienko V V   Armbrister V A   Bloshkin A A  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45008-45012

IOP Publishing

Access to resources Recommend Favorite

Determination of the Band Offset of GalnP- GaAs and AllnP- GaAs Quantum Wells by Optical Spectroscopy

By Kuo H.   Kuo J.   Wang Y.   Lin C.   Chen H.   Stillman G.  

Journal of Electronic Materials, Vol. 26, Iss. 8, 1997-08 ,pp. : 944-948

Springer Publishing Company

Access to resources Recommend Favorite

Coupling effect of quantum wells on band structure

By Jie Chen   Weiyou Zeng  

Journal of Semiconductors, Vol. 36, Iss. 10, 2015-10 ,pp. : 102005-102008

IOP Publishing

Access to resources Recommend Favorite

Arsenic incorporation in InAsP/InP quantum wells

By Dagnall G.   Brown A.   Stock S.  

Journal of Electronic Materials, Vol. 28, Iss. 10, 1999-10 ,pp. : 1108-1110

Springer Publishing Company

Access to resources Recommend Favorite

Determination of type-I band offsets in GaBi_xAs_1–x quantum wells using polarisation-resolved photovoltage spectroscopy and 12-band k.p calculations

By Broderick Christopher A   Harnedy Patrick E   Ludewig Peter   Bushell Zoe L   Volz Kerstin   Manning Robert J   O’Reilly Eoin P  

Semiconductor Science and Technology, Vol. 30, Iss. 9, 2015-09 ,pp. : 94009-94022

IOP Publishing

Access to resources Recommend Favorite