![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Torchynska T.V. Aguilar-Hernandez J. Schacht Hernandez L. Polupan G. Goldstein Y. Many A. Jedrzejewski J. Kolobov A.
Publisher: Elsevier
ISSN: 0167-9317
Source: Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 83-90
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
By Felix J F Aziz M de Araujo C I L de Azevedo W M Anjos V Henini M
Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Hafnium oxide gate dielectric for strained-Si 1-x Ge x
By Maiti C.K. Maikap S. Chatterjee S. Nandi S.K. Samanta S.K.
Solid-State Electronics, Vol. 47, Iss. 11, 2003-11 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Interfacial stability between zirconium oxide thin films and silicon
By Zhang N. Song Z. Xing S. Shen Q. Lin C.
Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. :