Growth and characterization of Al 2 O 3 gate dielectric films by low-pressure metalorganic chemical vapor deposition

Author: Shao Q.-Y.   Li A.-D.   Ling H.-Q.   Wu D.   Wang Y.   Feng Y.   Yang S.-Z.   Liu Z.-G.   Wang M.   Ming N.-B.  

Publisher: Elsevier

ISSN: 0167-9317

Source: Microelectronic Engineering, Vol.66, Iss.1, 2003-04, pp. : 842-848

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