Analysis of depth profile for impurity concentration in Si wafer by synchrotron radiation excited total reflection X-ray fluorescence spectroscopy

Author: Huh B.-K.   Kim J.-S.   Shin N.-S.   Koo Y.-M.   Chung H.-Y.  

Publisher: Elsevier

ISSN: 0584-8547

Source: Spectrochimica Acta Part B: Atomic Spectroscopy, Vol.58, Iss.8, 2003-08, pp. : 1445-1452

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