Improved sidewall morphology on dry-etched SiO 2 masked GaN features

By Ren F.   Pearton S.   Shul R.   Han J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 175-178

Springer Publishing Company

Access to resources Recommend Favorite

InGaN quantum dot photodetectors

By Ji L.W.   Su Y.K.   Chang S.J.   Liu S.H.   Wang C.K.   Tsai S.T.   Fang T.H.   Wu L.W.   Xue Q.K.  

Solid-State Electronics, Vol. 47, Iss. 10, 2003-10 ,pp. : 1753-1756

Elsevier

Access to resources Recommend Favorite

InGaN lattice constant engineering via growth on (In,Ga)N/GaN nanostripe arrays

By Keller Stacia   Lund Cory   Whyland Tyler   Hu Yanling   Neufeld Carl   Chan Silvia   Wienecke Steven   Wu Feng   Nakamura Shuji   Speck James S   DenBaars Steven P   Mishra Umesh K  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105020-105028

IOP Publishing

Access to resources Recommend Favorite

Relaxed c-plane InGaN layers for the growth of strain-reduced InGaN quantum wells

By Hestroffer Karine   Wu Feng   Li Haoran   Lund Cory   Keller Stacia   Speck James S   Mishra Umesh K  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105015-105020

IOP Publishing

Access to resources Recommend Favorite

Multiphononon resonant Raman scattering in He⁺-implanted InGaN

By Domènech-Amador N   Cuscó R   García-Hernansanz R   González-Díaz G   Gandhi J   Bensaoula A   Artús L  

Semiconductor Science and Technology, Vol. 29, Iss. 4, 2014-04 ,pp. : 45013-45017

IOP Publishing

Access to resources Recommend Favorite