Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates

By Hanser A.   Wolden C.   Perry W.   Zheleva T.   Carlson E.   Banks A.   Therrien R.   Davis R.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 238-245

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Si Doping of GaN in Hydride Vapor-Phase Epitaxy

By Richter E.  

Journal of Electronic Materials, Vol. 42, Iss. 5, 2013-05 ,pp. : 820-825

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Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy

By Yablonskii G.   Gurskii A.   Lutsenko E.   Marko I.   Schineller B.   Guttzeit A.   Schön O.   Heuken M.   Heime K.   Beccard R.   Schmitz D.   Juergensen H.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 222-228

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Acceptor and donor doping of Al x Ga 1−x N thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

By Davis R.   Bremser M.   Perry W.   Nam O.   Griffis D.   Loesing R.   Ricks D.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 229-232

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GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers

By Nikolaev A.   Rendakova S.   Nikitina I.   Vassilevski K.   Dmitriev V.  

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